jiang su changjiang electronics technology co., ltd to - 126 plastic - encapsulate transistors D882 transistor ? npn ? features power dissipation p cm : 1.25 w ? t amb=25 ??? collector current i cm : 3 a c ollector - base voltage v ( br ) cbo : 40 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v(br) cbo i c = 100 | a ? i e =0 40 v c ollector - emitter breakdown voltage v(br) ceo i c = 10 ma , i b =0 30 v emitter - base breakdown voltage v(br) e b o i e = 100 | a ? i c =0 6 v collector cut - off current i cbo v cb =40 v , i e =0 1 | a collector cut - off current i ceo v ce =30 v , i b =0 10 | a emitter cut - off current i ebo v e b =6v , i c =0 1 | a h fe ? 1 ? v ce = 2 v , i c = 1a 60 400 dc current gain h fe ? 2 ? v ce =2 v, i c = 100 m a 32 collector - emitter saturation voltage v ce (sat) i c =2 a , i b = 0.2a 0.5 v b ase - emitter saturation voltage v be (sat) i c =2a, i b = 0.2a 1.5 v transition freq uency f t v ce = 5 v, i c = 0.1 ma f = 10 mhz 50 mhz classification of h fe (1) rank r o y gr range 60 - 120 100 - 200 160 - 320 200 - 400 1 2 3 to ?a 126 1. emitter 2.collector 3 . base
d c a a1 b b1 e p l l1 e e1 t o-126 p ackage outline dimensions symbol a a1 b b1 c d e e e1 l l1 p |? min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 4.480 15.300 2.100 3.900 3.000 max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 4.680 15.700 2.300 4.100 3.200 min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.176 0.602 0.083 0.154 0.118 max 0.114 0.059 0.034 0.054 0.024 0.307 0.433 0.184 0.618 0.091 0.161 0.126 dimensions in millimeters dimensions in inches 0.090typ 2.290typ |?
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